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Summary
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Developed method
for processing and interpretation of electron spectra allows
studying sharp or diffuse interfaces with nanometer accuracy;
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Method is non
destructive, and suitable for in situ analysis of multilayer
structures;
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Depth of analysis depends only on the energy of incident electrons.
For example, varying the beam energy
from 4 to 32keV one can analyze a copper target depth from 25 to
1600nm;
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The spectrum measuring time is about few seconds (max
time <1min)
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Accuracy of depth profile measurement can be increased.
Enhancement of energy resolution down
to 0.2% together with current resolution down to 0.05% results in
analysis accuracy above 0.1nm.
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