for processing and interpretation of electron spectra allows
studying sharp or diffuse interfaces with nanometer accuracy;
Method is non
destructive, and suitable for in situ analysis of multilayer
Depth of analysis depends only on the energy of incident electrons.
For example, varying the beam energy
from 4 to 32keV one can analyze a copper target depth from 25 to
The spectrum measuring time is about few seconds (max
Accuracy of depth profile measurement can be increased.
Enhancement of energy resolution down
to 0.2% together with current resolution down to 0.05% results in
analysis accuracy above 0.1nm.