Alexey B. Pavolotsky

 

BORN

October 31, 1968 in Lubertzy, Moscow region

EDUCATION -

        1993 - present time -- External Ph.D Cources from Moscow State University/ Tsiolkowsky Moscow Aircraft Technology Institute.

        1985 - 1990 -- Tsiolkowsky Moscow Aircraft Technology Institute.

        Summer 1990 -- M.Sc. in Material Science at Tsiolkowsky Moscow Aircraft Technology Institute; graduation with Red Diploma paper (equivalent of First class of Honors).

POSITION

        Since January 2002  -- Researcher at Group for Advanced Receiver Development of Onsala Space Observatory, Chalmers University of Technology, Göteborg, Sweden

Task: Fabrication process for SIS-mixers (Nb/Al-AlOx/Nb) set up and further maintenance

        January 1998  present time -- R&D Engineer at Cryoelectronics Lab, Department of Physics of Moscow State University.

Task: Submicron metal tunnel devices fabricating processes:

- thin film deposition;

- reactive ion etching;

- e-beam lithography;

- SEM inspection.

        July 1996  December 1997 -- R&D Engineer at Physikalisch‑Technische Bundesanstalt, Braunschweig, Germany.

Task: Process flow for submicron Nb/AlOx/Nb tunnel circuits.

- spin-on glass planarization and partial etch-back;

- 100nm etching mask preparation and stripping;

- e-beam lithography;

- SEM inspection.

        June 1996 -- Invited Researcher at State University of New York, Stony Brook.

Task: e-beam lithography.

        June 1993 - May 1996 -- R&D Engineer at Cryoelectronics Lab, Department of Physics of Moscow State University.

Task: Development of fabrication processes for superconductive electronics circuits (like SQUIDs):

- thin film deposition;

- reactive ion etching;

- photolithography;

- SEM inspection.

        July 1990 - July 1993 -- Staff Research Assistant and R&D Engineer at Tsiolkowsky Moscow Aircraft Technology Institute.

Task: Development of fabrication process and elements of equipment for ion beam treatment of solids, thin films and powders.

LANGUAGES

Russian, English


BASIC PUBLICATIONS

1.    E. Il'ichev, V. Zakosarenko, L. Fritzsch, R. Stolz, H.E. Hoenig, H.‑G. Meyer, A.B. Zorin, V. Khanin, M. Götz, A.B. Pavolotsky, and J. Niemeyer. Measuring of Small Supercurrents in Niobium SQUID Circuits - Int. Symposium on Mesoscopic Superconductivity (MS2000), March 8‑10, 2000, NTT Basic Res., Japan - Physica C: Superconductivity, vol. 352 (1-4), 2001, pp. 141‑143.

2.    E. Il'ichev, V. Zakosarenko, L. Fritzsch, R. Stolz, H.E. Hoenig, H.‑G. Meyer, M. Götz, A.B. Zorin, V.V. Khanin, A.B. Pavolotsky, and J. Niemeyer. Radio‑frequency based monitoring of small supercurrents. - Rev. Scientific Instr. March 2001 vol. 72(3), pp. 1882‑1887.

3.    K.Yu. Arutyunov, T.V. Ryynänen, J.P. Pekola and A.B. Pavolotski. Superconducting transition of single-crystal tin microstructures - Physical Review B, vol. 63, 092506 (8 Feb. 2001).

4.    D.E. Kirichenko, A.B. Pavolotsky, I.G. Prokhorova, O.V. Snigirev, R. Mezzena, S. Vitale, Yu.V. Maslennikov and V.Y. Slobodchikov. Noise Characteristics of a dc SQUID-based Amplifier - Inst. Phys. Conf. Ser. No 167, 2000 (Paper presented at Applied Superconductivity, Spain, 14-17 September 1999), p. 537 - 540.

5.    D.E. Kirichenko, A.B. Pavolotsky, I.G. Prokhorova, O.V. Snigirev. Characteristics of the thin film sensor for scanning magnetic microscope based on SQUID (russian/english) - Zhurnal Tekhnicheskoi Fiziki (Technical Physics), 1999, vol.69/7, p. 112 - 117.

6.    A.B. Pavolotsky, Th. Weimann, H. Scherer, V.A. Krupenin, J. Niemeyer, A.B. Zorin. Multilayer technique for fabricating Nb junction circuits exhibiting charging effects - J.Vac.Sci.Technol. B 17(1), Jan/Feb 1999, p.230-232.

7.    A.B. Pavolotsky, Th. Weimann, H. Scherer, J. Niemeyer, A.B. Zorin and V.A. Krupenin. Novel Method for Fabricating Deep submicron Nb/AlOx/Nb Tunnel junctions based on Spin-on glass planarization - IEEE Trans. On Appl.Supercond., vol.9, No.2, June 1999, 3251 - 3254.

8.    E. Il'ichev, V. Zakosarenko, L. Fritzsch, R. Stolz, H.E. Hoenig, H.‑G. Meyer, A.B. Zorin, A.B. Pavolotsky, and J. Niemeyer. Messung kleiner Supraströme in LTS Josephson Schaltungen. Tagung "Kryoelektronische Bauelemente 1999", Köln, 3.-5. Oktober 1999, Impressum Herausgeber, Redaktion, Satz und Druck, S. 98.

9.    K. Yu. Arutyunov, S. V. Lotkhov, A. B. Pavolotski, D. A. Presnov and L. Rinderer. Resistive transition anomaly in superconducting nanostructures. - Phys. Rev. B March 1, 1999, vol.59(9), p.6487 - 6498.

10. D.E. Kirichenko, A.B. Pavolotsky, I.G. Prokhorova, O.V. Snigirev, R. Mezzena, S. Vitale, Yu.V. Maslennikov and A.V. Beljaev. Advanced Version of two-stage dc SQUID-based Amplifier - IEEE Trans. On Appl.Supercond., vol.9, No.2, June 1999, p. 2906 - 2908.

11. D.E. Kirichenko, A.B. Pavolotsky, I.G. Prokhorova, O.V. Snigirev, R. Mezzena, S. Vitale, A.V. Beljaev. Two stage dc SQUID-based amplifier with double transformer coupling scheme - Proc. EuCAS-97 30 June-3 July, 1997, Inst. Phys. Conf. Ser. No 158, p.727 - 730.

12. V.A. Krupenin, A.B. Pavolotsky, I.G. Prokhorova, O.V. Snigirev. Fabrication technology and characterization of dielectric layers for thin film RC-filters for Josephson and single electron devices (russian/english). - Pis'ma v Zhurnal Technicheskoi Physiki (Technical Physics Letters), January 26, 1996, vol.22/2,.p. 19 - 27.

13. V.P Afanas'ev, S.D. Fedorovich, A.V. Lubenchenko, A.B. Pavolotsky, A.A. Ryzhov. Depth profile measurement on the base of reflected electron energy loss spectroscopy - 6-th European Conference on Application of Surface and Interface Analysis (ECASIA 1995), Montreux, Switzerland, October 9 - 13, 1995.

14. A.M. Borisov, B.L. Krit, A.B. Pavolotsky. Tribology behavior of nitrogen implanted chromium steel. Izvestija Rossijskoj Akademii Nauk, serija physicheskaya, 1994, 58, ¹ 3, pp. 184 - 186.

15. I.Yu. Krasnov, B.L. Krit, A.E. Ligachov, S.B. Novichkov, A.B. Pavolotsky, A.G. Stroganov. Ion beam modification of dispersion materials - 7-th International Conference on Ion Beam Modification of Materials, 1990 (IBMM'90) Knoxville, Tennessee, September 9-14 - Final Program and Abstracts, p.192).